Focusing on the fundamental and application research of quantum materials based optoelectronics, photonics, and terahertz technology.

Research Orientation

The main research orientation of the center is the research on broad-spectrum and high-performance light detection technology based on novel low dimensional semiconductor materials, as well as the application of terahertz detection in biomolecular imaging technology.

Talents of the center

Two researchers and three associate researchers are included in the center.

Representative achievements

1. Substantially Enhanced Properties of CVD grown 2D WS2: High Concentration of Caption Substitutional Doping by Erbium against Vacancy Generation, Research, 2022, Doi.org/10.34133/2022/9840970.

2. Fast and Broadband Photoresponse of a Few-Layer GeSe Field E？ect Transistor with Direct Band Gaps，ACS Appl. Mater. Interfaces 2019, 11, 38031？38038.

3. Band structure and photoelectric characterization of GeSe monolayer, Advacend Functional Materials, 2018, 28, 1704855.

4. Preparation of Mixed Few-Layer GeSe Nanosheets with High Efficiency by the Thermal Sublimation Method, ACS Appl. Mater. Interfaces 2023, 15, 33, 39732–39739.

5. Supersensitive and Broadband Photodetectors Based on High Concentration of Er3+/Yb3+ Co-doped WS2 Monolayer, Advanced Optical Materials, 2023, DOI: 10.1002/adom.202302229.

Contact information

Hongquan Zhao，hqzhao@cigit.ac.cn, 86-18908319866