Educational Background

2005-2009 Southwest University, B.S.

2009-2014 Southwest Jiaotong University, Ph.D.

Professional Career

2014-2018 Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences. Assistant Researcher.

2018- Present, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences. Associate Researcher.

Quantum Coherence in Solid State,

2D Materials and Optoelectronic Devices

[1] X. Shi，M. Zhang，L. F. Wei，Quantum computation with moving quantum dots generated by surface acoustic waves，Physical Review A，2011，84（6）：062310-062317.

[2] X. Shi，L. F. Wei，C. H. Oh，Quantum computation with surface-state electrons by rapid population passages，Science China Physics, Mechanics & Astronomy，2014，57（9）：1718-1724.

[3] X. Shi*, H. Yuan, X. Mao, Y. Ma, and H. Q. Zhao, Robust quantum state transfer inspired by Dzyaloshinskii-Moriya interactions, Physical Review A, 2017, 95, 052332.

[4] Hongquan Zhao*, Yuhui Yang, Chunxiang Wang, Dahua Zhou, Xuan Shi*, Yuzhi Li, Yuliang Mao, Fast and Broadband Photoresponse of a Few-Layer GeSe Field-Effect Transistor with Direct Band Gaps, ACS Applied Materials & Interfaces, 2019, 11, 41, 38031-38038.

[5] X. Shi and H. Q. Zhao, Effect of spontaneous emission on the shortcut to adiabaticity in three-state systems, Physical Review A, 2021, 104, 052221.

[6] Bing Yan, Bo Ning, Guoxin Zhang, Dahua Zhou, Xuan Shi*, Chunxiang Wang, Hongquan Zhao, Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances, Adv. Optical Mater. 2022, 10(6): 2102413.

[7] Bing Yan, Guoxin Zhang, Bo Ning, Sikai Chen, Yang Zhao, Dahua Zhou, Xuan Shi*, Jun Shen, Zeyun Xiao and Hongquan Zhao*. Preparation and photoelectric characterization of p-GeSe/p-WS2 heterojunction devices [J]. Journal of Physics D: Applied Physics. Journal of Physics D: Applied Physics, 2022, 55 325101

[8] Hongquan Zhao, Guoxing Zhang, Bing Yan, Bo Ning, Chunxiang Wang, Yang Zhao, Xuan Shi*, "Substantially Enhanced Properties of 2D WS2 by High Concentration of Erbium Doping against Tungsten Vacancy Formation", Research,  2022, 4, 13.

[9] Qiang Chen, Yaqing Chen, Meng Ju, Xuan Shi*, Peng Wang, Hong Chen, Hongkuan Yuan, Sm cluster on hexagonal boron nitride supported by Ir(111): Formation of magnetic cluster superlattice Sm13 @h-BN|Ir(111), Applied Surface Science, 2022, 604: 154478.

[10] Shaoxiang Liu, Yang Zhao, Zuqiang Huang, Yin Chen, Zepeng Wu, Xianxiao Liang, Xiu Liu, Chunxiang Wang, Hongquan Zhao*, and Xuan Shi*, Supersensitive and Broadband Photodetectors Based on High Concentration of Er3+/Yb3+ Co-doped WS2 Monolayer, Adv. Optical Mater. 2023, 2302229.