Chongqing Institute of Green and Intelligent Technology , Chinese Academy of
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Shi Haofei is a professor, doctoral supervisor, and director of the Micro/Nano Manufacturing and System Integration Center. He has been selected as a national-level innovative leader and has received the China Youth Science and Technology Award and the Chinese Academy of Sciences Young Scientist Award. His research focuses on new materials and optoelectronic devices.
From 2000 to 2004, he studied at the University of Electronic Science and Technology and obtained a bachelor's degree; from 2004 to 2009, he studied at the Institute of Optics and Electronics, Chinese Academy of Sciences, and obtained a doctoral degree; from 2009 to 2011, he conducted postdoctoral research at the University of Michigan in the United States; since 2011, he has been working at the Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences.
As the project leader, he has presided over six national-level scientific research projects such as the National "863" Program and the National Key Research and Development Program, as well as more than ten provincial and ministerial-level projects. He has published one academic book, more than 50 SCI academic papers, and holds 133 authorized national invention patents. He serves as a delegate to the 13th and 14th National People's Congresses, a member of the China Society for Optical Engineering, a member of the China Association of Young Science and Technology Workers, and an editorial board member of academic journals such as "Functional Materials" and "Infrared and Laser Engineering".
Graphene and Optoelectronic Devices
1. National-level Innovative Leader
2. China Youth Science and Technology Award
3. Chinese Academy of Sciences Young Scientist Award
4. First Prize for Technological Invention in Chongqing
[1] Polarity-Tunable Field Effect Phototransistors. Nano Letters, 2023, 23, 4923-4930.（Corresponding author）
[2] The Electrical Behaviors of Grain Boundaries in Polycrystalline Optoelectronic Materials. Advanced Materials, 2023, 36.（Corresponding author）
[3] Ultrahigh photogain short-wave infrared detectors enabled by integrating graphene and hyperdoped silicon. ACS nano, 2022, 16, 12777-12785.（Corresponding author）
[4] Graphene Growth across the Twin Boundaries of Copper Substrate. Advanced Functional Materials, 2022, 32, 2202415.（Corresponding author）
[5] Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates. Nature Communications, 2022, 13, 1773.（Corresponding author）
[6] In-Situ Growth of High-Quality Customized Monolayer Graphene Structures for Optoelectronics. Advanced Functional Materials, 2022, 32, 2202376.（Corresponding author）
[7] Interface Engineering of a Silicon/Graphene Heterojunction Photodetector via a Diamond-Like Carbon Interlayer. ACS Applied Materials & Interfaces, 2021, 13, 4692-4702.（Corresponding author）
[8] Gate modulation enhanced position-sensitive detectors using graphene/silicon-on-insulator structure. 2021, 184, 445-451.（Corresponding author）
[9] Enhancement of the Photoresponse of Monolayer MoS2 Photodetectors Induced by a Nanoparticle Grating. ACS Applied Materials & Interfaces, 2020, 12, 8429-8436. （Corresponding author）
[10] Graphene-based active frequency selective surface in microwave frequency. Journal of Applied Physics. 2019, 125, 094501. （Corresponding author）