·1996.9-2000.7, Graduation from Department of Physics, Xiangtan University, Hunan, China.

·2000.09-2003.07, M.Sc degree in Material Science and Engineering, Guangxi University, Beijing, China.

·2003.09 -2006.07, Ph D degree of microelectronics and solid-state electronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.

·2006.08-2009.03, Postdoctoral position, Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University, Japan

·2009.04-2013.03, JSPS Research fellow, The Institute of Scientific and Industrial Research (ISIR), Osaka University, Japan

·2013.04-now, Professor, Chongqing Institute of Green and Intelligent Technology (CIGIT), Chinese Academy of Sciences (CAS), Chongqing, China

Quantum Materials and Optics

1. Excellent Paper Award From Chongqing Association for Science and Technology Natural Science (2017)

2. Excellent Paper Award From Chongqing Association for Science and Technology Natural Science (2019)

3. Top 10 Outstanding Scientific Researchers of Chongqing Association for Science and Technology (2019)

4. Western Light Youth Talent, Class A (2016). Chinese Academy of Sciences

5. Chongqing Talents (2020), Grant No. CQYC202002064

1. Lead author, Substantially Enhanced Properties of CVD grown 2D WS2: High Concentration of Caption Substitutional Doping by Erbium against Vacancy Generation, Research, 2022, Doi.org/10.34133/2022/9840970.

2. Lead author, Fast and Broadband Photoresponse of a Few-Layer GeSe Field E？ect Transistor with Direct Band Gaps，ACS Appl. Mater. Interfaces 2019, 11, 38031？38038.

3. Lead author, Band structure and photoelectric characterization of GeSe monolayer, Advacend Functional Materials, 2018,28（6） 1704855.

4. Lead author, Bandgap modulation of MoS2 monolayer by thermal annealing and quick cooling，Nanoscale, 2016, 8（45）：18995-19003.

5. corresponding author, Preparation of Mixed Few-Layer GeSe Nanosheets with High Efficiency by the Thermal Sublimation Method, ACS Appl. Mater. Interfaces 2023, 15, 33, 39732–39739.

6. corresponding author, Supersensitive and Broadband Photodetectors Based on High Concentration of Er3+/Yb3+ Co-doped WS2 Monolayer, Advanced Optical Materials, 2023, DOI: 10.1002/adom.202302229.

7. corresponding author, Ultra-Thin GeSe/WS2 Vertical Heterojunction with Excellent Optoelectronic Performances, Adv. Optical Mater. 2022, 2102413.

8. corresponding author,Design lithium storage materials by lithium adatoms adsorption at the edges of zigzag silicene nanoribbon: A first principle study, Applied Surface Science, 2017, 406, 161-169.

9. corresponding author, Robust quantum state transfer inspired by Dzyaloshinskii-Moriya interactions”, Physical Review A, 2017, 95, 052332.

10. corresponding author, Effect of spontaneous emission on the shortcut to adiabaticity in three-state systems”, Physical Review A, 2021, 104(5), 052221.